3.1 - 44 om55n10nk - om75n06nk 3.1 OM60N10NK (t c = 25c unless otherwise specified) avalanche characteristics min. typ. max. units test conditions i ar avalanche current 60 a (repetitive or non-repetitive,t j = 25c) e as single pulse avalanche energy 720 mj (starting t j = 25c, i d = i ar , v dd = 25 v) e ar repetitive avalanche energy 100 mj (pulse width limited by t jmax , d < 1%) i ar avalanche current 37 a (repetitive or non-repetitive, t j = 100c) electrical characteristics - off v (br)dss drain-source 100 v i d = 250 a, v gs = 0 breakdown voltage i dss zero gate voltage 250 a v ds = max. rat. drain current (v gs = 0) 1000 a v ds = max. rat. x 0.8, t c = 125c i gss gate-body leakage 100 na v gs = 20 v current (v ds = 0) electrical characteristics - on* v gs(th) gate threshold voltage 2 4 v v ds = v gs , i d = 250 a r ds(on) static drain-source on 0.025 v gs = 10 v, i d = 30 a resistance 0.05 t c = 100c i d(on) on state drain current 60 a v ds > i d(on) x r ds(on)max , v gs = 10 v electrical characteristics - dynamic g fs forward transductance 25 s v ds > i d(on) x r ds(on)max , i d = 30 a c ies input capacitance 4000 pf v ds = 25 v c oes output capacitance 1100 pf v gs = 0 c res reverse transfer capacitance 250 pf f = 1 mhz electrical characteristics - switching on t d(on) turn-on time 90 ns v dd = 80 v, i d = 30 a t r rise time 270 ns r g = 50 , v gs = 10 v (di/dt) on turn-on current slope 270 a/s v dd = 80 v, i d = 30 a r g = 50 , v gs = 10 v q g total gate charge 120 nc v dd = 80 v, i d = 30 a, v gs = 10 v electrical characteristics - switching off t r(voff) off voltage rise time 200 ns v dd = 80 v, i d = 30 a t f fall time 210 ns r g = 50 , v gs = 10 v t cross cross-over time 410 ns electrical characteristics - source drain diode i sd source drain current 60 a i sdm * source drain current (pulsed) 240 a v sd forward on voltage 1.6 v i sd = 60 a, v gs = 0 t rr reverse recovery time 180 ns i sd = 60 a, di/dt = 100 a/s v r = 80 a q rr reverse recovery charge 1.8 c i rrm reverse recovery current 10 a *pulse test: pulse width < 300sec, duty cycle 1.5%. om55n10nk (t c = 25c unless otherwise specified) avalanche characteristics min. typ. max. units test conditions i ar avalanche current 55 a (repetitive or non-repetitive,t j = 25c) e as single pulse avalanche energy 600 mj (starting t j = 25c, i d = i ar , v dd = 25 v) e ar repetitive avalanche energy 100 mj (pulse width limited by t jmax , d < 1%) i ar avalanche current 37 a (repetitive or non-repetitive, t j = 100c) electrical characteristics - off v (br)dss drain-source 100 v i d = 250 a, v gs = 0 breakdown voltage i dss zero gate voltage 250 a v ds = max. rat., drain current (v gs = 0) 1000 a v ds = max. rat. x 0.8, t c = 125c i gss gate-body leakage 100 na v gs = 20 v current (v ds = 0) electrical characteristics - on* v gs(th) gate threshold voltage 2 4 v v ds = v gs , i d = 250 a r ds(on) static drain-source on 0.03 v gs = 10 v, i d = 30 a resistance 0.06 t c = 100c i d(on) on state drain current 55 a v ds > i d(on) x r ds(on)max , v gs = 10 v electrical characteristics - dynamic g fs forward transductance 25 s v ds > i d(on) x r ds(on)max , i d = 30 a c ies input capacitance 4000 pf v ds = 25 v c oes output capacitance 1100 pf v gs = 0 c res reverse transfer capacitance 250 pf f = 1 mhz electrical characteristics - switching on t d(on) turn-on time 90 ns v dd = 80 v, i d = 30 a t r rise time 270 ns r g = 50 , v gs = 10 v (di/dt) on turn-on current slope 270 a/s v dd = 80 v, i d = 30 a r g = 50 , v gs = 10 v q g total gate charge 120 nc v dd = 80 v, i d = 30 a, v gs = 10 v electrical characteristics - switching off t r(voff) off voltage rise time 200 ns v dd = 80 v, i d = 30 a t f fall time 210 ns r g = 50 , v gs = 10 v t cross cross-over time 410 ns electrical characteristics - source drain diode i sd source drain current 55 a i sdm * source drain current (pulsed) 180 a v sd forward on voltage 1.5 v i sd = 55 a, v gs = 0 t rr reverse recovery time 180 ns i sd = 55 a, di/dt = 100 a/s v r = 80 a q rr reverse recovery charge 1.8 c i rrm reverse recovery current 10 a *pulse test: pulse width < 300sec, duty cycle 1.5%.
3.1 - 45 om55n10nk - om75n06nk 3.1 om75n05nk (t c = 25c unless otherwise specified) avalanche characteristics min. typ. max. units test conditions i ar avalanche current 70 a (repetitive or non-repetitive,t j = 25c) e as single pulse avalanche energy 900 mj (starting t j = 25c, i d = i ar , v dd = 25 v) e ar repetitive avalanche energy 200 mj (pulse width limited by t j max , d < 1%) i ar avalanche current 40 a (repetitive or non-repetitive, t j = 100c) electrical characteristics - off v (br)dss drain-source 50 v i d = 250 a, v gs = 0 breakdown voltage i dss zero gate voltage 250 a v ds = max. rat. drain current (v gs = 0) 1000 a v ds = max. rat. x 0.8, t c = 125c i gss gate-body leakage 100 na v gs = 20 v current (v ds = 0) electrical characteristics - on* v gs(th) gate threshold voltage 2 4 v v ds = v gs , i d = 250 a r ds(on) static drain-source on 0.016 v gs = 10 v, i d = 40 a resistance 0.032 t c = 100c i d(on) on state drain current 75 a v ds > i d(on) x r ds(on)max , v gs = 10 v electrical characteristics - dynamic g fs forward transconductance 25 s v ds > i d(on) x r ds(on)max , i d = 40 a c ies input capacitance 4100 pf v ds = 25 v c oes output capacitance 1800 pf v gs = 0 c res reverse transfer capacitance 420 pf f = 1 mhz electrical characteristics - switching on t d(on) turn-on time 190 ns v dd = 20 v, i d = 40 a t r rise time 900 ns r g = 50 , v gs = 10 v (di/dt) on turn-on current slope 150 a/s v dd = 20 v, i d = 40 a r g = 50 , v gs = 10 v q g total gate charge 130 nc v dd = 20 v, i d = 40 a, v gs = 10 v electrical characteristics - switching off t r(voff) off voltage rise time 360 ns v dd = 35 v, i d = 75 a t f fall time 280 ns r g = 50 , v gs = 10 v t cross cross-over time 600 ns electrical characteristics - source drain diode i sd source drain current 75 a i sdm * source drain current (pulsed) 300 a v sd forward on voltage 1.5 v i sd = 75 a, v gs = 0 t rr reverse recovery time 120 ns i sd = 75 a, di/dt = 100 a/s v r = 20 v q rr reverse recovery charge 0.45 c i rrm reverse recovery current 6.5 a *pulse test: pulse width < 300sec, duty cycle 1.5%. om75n06nk (t c = 25c unless otherwise specified) avalanche characteristics min. typ. max. units test conditions i ar avalanche current 70 a (repetitive or non-repetitive,t j = 25c) e as single pulse avalanche energy 900 mj (starting t j = 25c, i d = i ar , v dd = 25 v) e ar repetitive avalanche energy 200 mj (pulse width limited by t j max , d < 1%) i ar avalanche current 40 a (repetitive or non-repetitive, t j = 100c) electrical characteristics - off v (br)dss drain-source 60 v i d = 250 a, v gs = 0 breakdown voltage i dss zero gate voltage 250 a v ds = max. rat. drain current (v gs = 0) 1000 a v ds = max. rat. x 0.8, t c = 125c i gss gate-body leakage 100 na v gs = 20 v current (v ds = 0) electrical characteristics - on* v gs(th) gate threshold voltage 2 4 v v ds = v gs , i d = 250 a r ds(on) static drain-source on 0.016 v gs = 10 v, i d = 40 a resistance 0.032 t c = 100c i d(on) on state drain current 75 a v ds > i d(on) x r ds(on)max , v gs = 10 v electrical characteristics - dynamic g fs forward transconductance 25 s v ds > i d(on) x r ds(on)max , i d = 40 a c ies input capacitance 4100 pf v ds = 25 v c oes output capacitance 1800 pf v gs = 0 c res reverse transfer capacitance 420 pf f = 1 mhz electrical characteristics - switching on t d(on) turn-on time 190 ns v dd = 25 v, i d = 40 a t r rise time 900 ns r g = 50 , v gs = 10 v (di/dt) on turn-on current slope 150 a/s v dd = 25 v, i d = 40 a r g = 50 , v gs = 10 v q g total gate charge 130 nc v dd = 25 v, i d = 40 a, v gs = 10 v electrical characteristics - switching off t r(voff) off voltage rise time 360 ns v dd = 40 v, i d = 75 a t f fall time 280 ns r g = 50 , v gs = 10 v t cross cross-over time 600 ns electrical characteristics - source drain diode i sd source drain current 75 a i sdm * source drain current (pulsed) 300 a v sd forward on voltage 1.5 v i sd = 75 a, v gs = 0 t rr reverse recovery time 120 ns i sd = 75 a, di/dt = 100 a/s v r = 25 v q rr reverse recovery charge 0.45 c i rrm reverse recovery current 6.5 a *pulse test: pulse width < 300sec, duty cycle 1.5%.
3.1 - 46 om55n10nk - om75n06nk 3.1 1.197 1.177 0.675 0.655 0.188 r. max. 0.440 0.420 0.161 0.151 0.525 r. max. 0.225 0.205 seating plane 0.312 min. 0.450 0.250 0.063 0.058 2 plcs. 0.135 max. 0.875 max. 1.53 ref. absolute maximum ratings (t c = 25c unless otherwise noted) parameter 60n10nk 55n10nk 75n06nk 75n05nk units v ds drain-source voltage 100 100 60 50 v v dgr drain-gate voltage (r gs = 1 m ) 100 100 60 50 v i d @ t c = 25c continuous drain current 2 60 55 75 75 a i d @ t c = 100c continuous drain current 2 37 33 45 45 a i dm pulsed drain current 1 180 180 225 225 a p d @ t c = 25c maximum power dissipation 130 130 130 130 w p d @ t c = 100c maximum power dissipation 55 55 55 55 w junction to case linear derating factor 1.00 1.00 1.00 1.00 w/c t j operating and t stg storage temperature range -55 to 150 -55 to 150 -55 to 150 -55 to 150 c lead temperature (1/16" from case for 10 secs.) 300 300 300 300 c 1 pulse test: pulse width 300 sec. duty cycle 2%. 2 package limited. package limitations parameter unit i d continous drain current 35 a linear derating factor, junction-to-ambient .033 w/c mechanical outline pin connection pin 1: gate pin 2: source case: drain thermal resistance (maximum) at t a = 25c r thjc junction-to-case 1.0 c/w r thja junction-to-ambient 30 c/w free air operation 2 1
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